to-92 plastic-encapsulate transistors bf421 transistor (pnp) BF423 features z low f eedback c apacitance. z pnp t ransistors in a to-92 p lastic p ackage. npn c omplements: bf420 and bf422 z class-b v ideo o utput s tages in c olour te levision and p rofessional m onitor e quipment. maximum ratings (t a =25 unless otherwise noted) symbol parameter bf421 BF423 unit v cbo collector-base voltage -300 -250 v v ceo collector-emitter voltage -300 -250 v v ebo emitter-base voltage -5 v i c collector current -continuous -100 ma p c collector power dissipation 0. 83 w rth j-a thermal resistance from junction to ambient 151 /w t j junction temperature 150 t stg storage temperature range - 5 5 ~ +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax unit collector-base breakdown voltage bf421 BF423 v (br)cbo i c =--100 a, i e =0 -300 -250 v collector-emitter breakdown voltage bf421 BF423 v (br)ceo i c = -1ma , i b =0 -300 -250 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-200 v , i e =0 -0.01 a emitter cut-off current bf421 BF423 i ebo v eb =-5v , i c =0 -0.1 -0.05 a dc current gain h fe v ce =-20v, i c =-25ma 50 collector-emitter saturation voltage bf421 BF423 v ce(sat) i c =-20ma, i b =-2ma i c =-30ma, i b =-5ma -0.6 v transition frequency f t v ce =-10v, i c =-10ma f = 100mhz 60 mhz feedback capacitance c re v ce =-30v,i c =0,f=1mhz 1.6 pf to-92 1. emitter 2.collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b?feb,2013
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